After improving the quality of power MOSFET transistors and reducing their price, a huge part of radio amateurs began to think about using these transistors in the output stages of amplifiers. And if, the first “field workers” sinned with some kind of blurryness, then with the development of the circuits and the devices themselves, the problem of sound quality began to gradually go away.
It should also be noted the undoubted advantages of field-effect transistors over bipolar ones:
1. PT can withstand noticeably large impulse loads, or rather overloads.
2. The absence of input currents, in some cases, makes it possible to significantly simplify the swinging cascades.
3. The parameters are less dependent on temperature, besides they have a large linear section of the transfer characteristic.
The amplifier is assembled on 2 pairs of quasi-complementary output transistors IRFP250N (Dismantling) with asymmetric preliminary stages, the module is also equipped with a thermal stabilization and quiescent current control circuit.
When using 8 ohm acoustics, the supply voltage can be raised to 55-60V to obtain the equivalent power at 4 ohms.
The module is easy to set up and requires only setting the quiescent current, depending on the supply voltage. The optimal quiescent current of the output stage is 60-120mA, which is approximately equal to 100-200mA for the power supply of the module as a whole. To adjust the quiescent current, the input is shorted, the load is turned off, the ammeter is turned on in the gap of one of the supply arms and the required value is set using a trimming resistor on the board, after which a pause of 5-10 minutes is needed. to warm up the radiator. You should focus on the acceptable temperature of the radiator (+ margin for a closed case).
For passive cooling at a supply voltage close to the maximum, a radiator of at least 1500 sq. cm is required
Subjectively, the amplifier pleased with the sound quality, can be used for any acoustics, including subwoofers, suitable in terms of power parameters and considered as an alternative to amplifiers on microcircuits.
The module can be recommended for building a high-quality high-power amplifier, as well as for getting acquainted with field-effect transistors at the output.
Measurements
Supply voltage bipolar -52V...0...+52V
Load resistance 4 Ohm
Power maximum, W 204
Testing power, W 150
Quiescent current 150mA
Frequency response (from 40 Hz to 15 kHz), dB +0.02, -0.12
Noise level, dB (A) -107,9
Dynamic range, dB (A) 108,0
THD, % 0,0210
THD + Noise, dB (A) -70,9
IMD + Noise, % 0,0150
IMD at 10 kHz, % 0,1370
Measurement Page
General characteristics
Amplifier class AB
Maximum supply voltage (bipolar / constant) DC 50V
Minimum supply voltage (bipolar / constant) DC 25V
Module size LxWxH, mm 90x100x35
Number of channels mono
Output transistors IRFP250N
Weight, kg 0,164

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Amplifier MOSFET, 200W

  • Brands kitON
  • Product Code: I2NS-01
  • Availability: In Stock
  • 1,810.00грн.


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