Testing the LANZAR, 100W amplifier. Measurements, specifications
| Testing device | Amplifier LANZAR 100W |
| Sampling mode | 24-bit, 48 kHz |
| Interface | E-MU1616m |
| Testing chain | E-MU1616m>Amplifier LANZAR 100W>E-MU1616m |
| Constant voltage DC | -43V...0...+43V |
| Load resistance | 4 Ohm |
| Testing power | 80W |
| Maximum power | 142W |
| Output transistors | 2SA1943/2SC5200 TOSHIBA |
| Quiescent current | 200mA |
| 20 Hz - 20 kHz filter | ON |
| Normalize amplitude | ON |
| Level change | -0.1 dB / -0.1 dB |
| Mono mode | ON |
| Calibration singal, Hz | 1000 |
| Polarity | correct/correct |
Summary
| Frequency response (from 40 Hz to 15 kHz), dB | +0.02, -0.16 |
Very good |
| Noise level, dB (A) | -111.1 |
Excellent |
| Dynamic range, dB (A) | 111.0 |
Excellent |
| THD, % | 0.049 |
Good |
| THD + Noise, dB (A) | -63.7 |
Average |
| IMD + Noise, % | 0.023 |
Good |
| IMD at 10 kHz, % | 0.374 |
Average |
| General performance | Good |
Frequency response
Left |
Right |
|
| From 20 Hz to 20 kHz, dB | -0.28, +0.02 |
-0.28, +0.02 |
| From 40 Hz to 15 kHz, dB | -0.16, +0.02 |
-0.16, +0.02 |
Noise level
Left |
Right |
|
| RMS power, dB | -110.7 |
-110.7 |
| RMS power (A-weighted), dB | -111.1 |
-111.1 |
| Peak level, dB FS | -79.0 |
-79.0 |
| DC offset, % | -0.0 |
-0.0 |
Dynamic range
Left |
Right |
|
| Dynamic range, dB | +110.8 |
+110.8 |
| Dynamic range (A-weighted), dB | +111.0 |
+111.0 |
| DC offset, % | +0.00 |
-0.00 |
THD + Noise (at -3 dB FS)
Left |
Right |
|
| THD, % | 0.04918 |
0.04918 |
| THD + Noise, % | 0.04918 |
0.04918 |
| THD + Noise (A-weighted), % | 0.06533 |
0.06533 |
Intermodulation distortion
Left |
Right |
|
| IMD + Noise, % | 0.02286 |
0.02286 |
| IMD + Noise (A-weighted), % | 0.02028 |
0.02028 |
IMD (swept tones)
Left |
Right |
|
| IMD + Noise at 5000 Hz, | 0.25491 |
0.25491 |
| IMD + Noise at 10000 Hz, | 0.39845 |
0.39845 |
| IMD + Noise at 15000 Hz, | 0.46719 |
0.46718 |
Maximum power
Calculation formula |
Meaning |
|
| Maximum power, W | (Vrms x Vrms) / 4 Ohm |
142 |
Conclusions
| The LANZAR low-noise transistor amplifier is designed for high-quality reproduction at high power. Due to the
popularity of this circuit, you can find a lot of information on the description, launch and configuration of
this amplifier on the Internet. The characteristics obtained from our laboratory measurements are fully consistent
with measurements in other places and show the high level of this solution.
Summary: The classic, time-tested, symmetrical circuit diagram bipolar transistor amplifier circuit has won a lot of fans around the world. The simplicity of the circuit and configuration does not require a high level of knowledge in radio electronics. The high output power and quality of the amplifier as a whole make it possible to assemble a powerful and high-quality amplifier that can drive almost any acoustic system. You can buy the module from our kit-amp.com store. |
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