Testing the HITACHI Premium, 100W amplifier. Measurements, specifications
Testing device | Amplifier HITACHI Premium 100W |
Sampling mode | 24-bit, 48 kHz |
Interface | E-MU1616m |
Testing chain | E-MU1616m>Amplifier HITACHI Premium 100W>E-MU1616m |
Constant voltage DC | -43V...0...+43V |
Load resistance | 4 Ohm |
Testing power | 80W |
Maximum power | 114W |
Output transistors | 2SK1058/2SJ162 |
Quiescent current | 120mA |
20 Hz - 20 kHz filter | ON |
Normalize amplitude | ON |
Level change | -0.2 dB / -0.2 dB |
Mono mode | ON |
Calibration singal, Hz | 1000 |
Polarity | correct/correct |
Summary
Frequency response (from 40 Hz to 15 kHz), dB | +0.02, -0.08 |
Excellent |
Noise level, dB (A) | -110.8 |
Excellent |
Dynamic range, dB (A) | 110.9 |
Excellent |
THD, % | 0.011 |
Good |
THD + Noise, dB (A) | -76.7 |
Good |
IMD + Noise, % | 0.017 |
Very good |
IMD at 10 kHz, % | 0.050 |
Good |
General performance | Very good |
Frequency response

Left |
Right |
|
From 20 Hz to 20 kHz, dB | -0.19, +0.02 |
-0.19, +0.02 |
From 40 Hz to 15 kHz, dB | -0.08, +0.02 |
-0.08, +0.02 |
Noise level

Left |
Right |
|
RMS power, dB | -109.3 |
-109.3 |
RMS power (A-weighted), dB | -110.8 |
-110.8 |
Peak level, dB FS | -76.4 |
-76.4 |
DC offset, % | -0.0 |
-0.0 |
Dynamic range

Left |
Right |
|
Dynamic range, dB | +109.7 |
+109.7 |
Dynamic range (A-weighted), dB | +110.9 |
+110.9 |
DC offset, % | +0.00 |
-0.00 |
THD + Noise (at -3 dB FS)

Left |
Right |
|
THD, % | 0.01123 |
0.01123 |
THD + Noise, % | 0.01131 |
0.01131 |
THD + Noise (A-weighted), % | 0.01464 |
0.01464 |
Intermodulation distortion

Left |
Right |
|
IMD + Noise, % | 0.01746 |
0.01746 |
IMD + Noise (A-weighted), % | 0.01716 |
0.01716 |
IMD (swept tones)

Left |
Right |
|
IMD + Noise at 5000 Hz, | 0.04457 |
0.04457 |
IMD + Noise at 10000 Hz, | 0.03305 |
0.03305 |
IMD + Noise at 15000 Hz, | 0.07088 |
0.07088 |
Maximum power

Calculation formula |
Meaning |
|
Maximum power, W | (Vrms x Vrms) / 4 Ohm |
114 |
Conclusions
The premium version of the «HITACHI 100W» amplifier is distinguished by the use of the best quality components world-famous
manufacturers, leaders in the radio components production industry. Due to the use of precision components in the
assembly of the module, it was possible to achieve slightly better results than the conventional version when
measuring and comparing modules.
The classic circuit, developed by the manufacturer of the output audio field-effect transistors 2SK1058 + 2SJ162 HITACHI,
has been showing itself perfectly for more than 40 years. Built-in protective diodes in the output transistors
eliminates the need for a thermal stabilization circuit and greatly simplifies the circuit. The advantage of lateral
field drivers is the low gate-source capacitance in comparison with the same IRFs, so its speed is at a very good level.
Summary: The transistor amplifier, thanks to the lateral field-effect transistors, designed exclusively for audio, differs in its sound from other brothers and is rightfully considered the most "tube" transistor amplifier. You can buy the module from our kit-amp.com store. The module is recommended for assembling an amplifier and working in a path of a sufficiently high level, from a signal source to acoustics. |
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