Testing the HITACHI, 100W amplifier. Measurements, specifications
| Testing device | Amplifier HITACHI 100W |
| Sampling mode | 24-bit, 48 kHz |
| Interface | E-MU1616m |
| Testing chain | E-MU1616m>Amplifier HITACHI 100W>E-MU1616m |
| Constant voltage DC | -43V...0...+43V |
| Load resistance | 4 Ohm |
| Testing power | 80W |
| Maximum power | 113W |
| Output transistors | 2SK1058/2SJ162 |
| Quiescent current | 120mA |
| 20 Hz - 20 kHz filter | ON |
| Normalize amplitude | ON |
| Level change | -0.2 dB / -0.2 dB |
| Mono mode | ON |
| Calibration singal, Hz | 1000 |
| Polarity | correct/correct |
Summary
| Frequency response (from 40 Hz to 15 kHz), dB | +0.02, -0.08 |
Excellent |
| Noise level, dB (A) | -110.5 |
Excellent |
| Dynamic range, dB (A) | 110.6 |
Excellent |
| THD, % | 0.014 |
Good |
| THD + Noise, dB (A) | -75.1 |
Good |
| IMD + Noise, % | 0.020 |
Good |
| IMD at 10 kHz, % | 0.058 |
Good |
| General performance | Very good |
Frequency response
Left |
Right |
|
| From 20 Hz to 20 kHz, dB | -0.19, +0.02 |
-0.19, +0.02 |
| From 40 Hz to 15 kHz, dB | -0.08, +0.02 |
-0.08, +0.02 |
Noise level
Left |
Right |
|
| RMS power, dB | -109.5 |
-109.5 |
| RMS power (A-weighted), dB | -110.5 |
-110.5 |
| Peak level, dB FS | -73.0 |
-73.0 |
| DC offset, % | -0.0 |
-0.0 |
Dynamic range
Left |
Right |
|
| Dynamic range, dB | +110.2 |
+110.2 |
| Dynamic range (A-weighted), dB | +110.6 |
+110.6 |
| DC offset, % | +0.00 |
-0.00 |
THD + Noise (at -3 dB FS)
Left |
Right |
|
| THD, % | 0.01354 |
0.01354 |
| THD + Noise, % | 0.01362 |
0.01362 |
| THD + Noise (A-weighted), % | 0.01753 |
0.01753 |
Intermodulation distortion
Left |
Right |
|
| IMD + Noise, % | 0.02006 |
0.02006 |
| IMD + Noise (A-weighted), % | 0.01972 |
0.01972 |
IMD (swept tones)
Left |
Right |
|
| IMD + Noise at 5000 Hz, | 0.05173 |
0.05173 |
| IMD + Noise at 10000 Hz, | 0.04134 |
0.04134 |
| IMD + Noise at 15000 Hz, | 0.08048 |
0.08048 |
Maximum power
Calculation formula |
Meaning |
|
| Maximum power, W | (Vrms x Vrms) / 4 Ohm |
113 |
Conclusions
| The classic circuit, developed by the manufacturer of the output audio field-effect transistors 2SK1058 + 2SJ162 HITACHI,
has been showing itself perfectly for more than 40 years. Built-in protective diodes in the output transistors
eliminates the need for a thermal stabilization circuit and greatly simplifies the circuit. The advantage of lateral
field drivers is the low gate-source capacitance in comparison with the same IRFs, so its speed is at a very good level.
Summary: The transistor amplifier, thanks to the lateral field-effect transistors, designed exclusively for audio, differs in its sound from other brothers and is rightfully considered the most "tube" transistor amplifier. You can buy the module from our kit-amp.com store. The module is recommended for assembling an amplifier and working in a path of a sufficiently high level, from a signal source to acoustics. |
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